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| Standard Power MOSFET IRFP 450 VDSS = 500 V ID(cont) = 14 A RDS(on) = 0.40 N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM T stg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Maximum Ratings 500 500 20 30 14 56 14 19 3.5 190 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W C C C TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Mounting torque 1.13/10 Nm/lb.in. 6 300 g C Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times l l l l l l l l l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2 4 100 TJ = 25C TJ = 125C 25 250 0.40 V V nA A A Applications Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers VDSS VGS(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V Advantages Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density VGS = 10 V, ID = 8.4 A Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. 92604E(5/96) (c) 2000 IXYS All rights reserved 1-2 IRFP 450 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 9.3 2800 VGS = 0 V, VDS = 25 V, f = 1 MHz 300 150 18 VGS = 10 V, VDS = 0.5 * VDSS, ID = 14 A RG = 6.2 , (External) 47 92 44 110 VGS = 10 V, VDS = 0.5 * VDSS, ID = 14 A 15 50 150 20 80 0.65 0.24 S pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 AD Outline gfs Ciss Coss Crss t d(on) tr td(off) tf Q g(on) Q gs Q gd R thJC R thCK VDS = 10 V; ID = 8.4 A, pulse test Dim. Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 14 56 1.4 500 A A V ns Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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